| 摘要 |
A digital memory system ( 30 ) includes a memory cell ( 52 ), a bit line ( 50 ), a transfer gate ( 60 ) a reference voltage generator ( 40 ), a sense amplifier ( 70 ) and a control circuit ( 80 ). The control circuit precharges the bit line to a bit line precharge voltage, which is sampled and stored. A corresponding reference voltage is generated after the bit line is isolated. The bit line and reference voltage are coupled to the sense amplifier so that a voltage is received based on charge stored in the memory cell. The sense amplifier then is isolated from the bit line and reference voltage and the sense amplifier is energized so that an output voltage is derived from the charge and reference voltage.
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