| 摘要 |
A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed. The method includes the steps of loading a low melting point dopant inside a low melting point dopant feeding instrument having vacuum-tight sealed sidewall and upper portions and an open bottom portion with net-like structure having many holes, and dipping the bottom portion of the low melting point dopant feeding instrument in a molten silicon liquid contained inside a quartz crucible. The low melting point dopant is directly dissolved in the molten silicon liquid or evaporated and then finally dissolved in the form of a gas phase into the molten silicon liquid through the open holes of the bottom portion of the melting point dopant feeding instrument.
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