| 摘要 |
A CPP structure magnetoresistance effect device (35) wherein a first region (45a) traversing a magnetoresistance film (44) along the front edge of the magnetoresistance film (44) is formed in a magnetic domain control film (45), a first bias magnetic field of a first magnetic field strength is established in the first region (45a), a second region (45b) of a second magnetic field strength traversing the magnetoresistance film (44) along the back edge of the magnetoresistance film (44) is formed, a second bias magnetic field of a second magnetic field strength greater than the first magnetic field strength is established in the second region (45b), and the thickness of the second region (45b) is greater than that of the first region (45a) to establish the first and second magnetic field strength. In such a CPP structure magnetoresistance effect device (35), a sense current of a large current value can flow through the magnetoresistance effect film (44). Further, a sufficiently high sensitivity of the magnetoresistance effect film (44) is ensured.
|
