| 摘要 |
The present invention provides a method of manufacturing a semiconductor device, which is capable of reducing variations in the rate of occurrence of failures at individual connecting portions in the semiconductor device. According to the semiconductor device manufacturing method, a Cu-containing TiN layer, which serves as a cap layer ( 130 ( 310 )), is formed using a Cu-containing Ti target. Cu contained in the Cu-containing TiN layer is diffused into an Al-Cu wiring ( 120 ( 320 )) located in a portion electrically connected to an interlayer wiring ( 200 ) by heat treatment.
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