发明名称 Method of forming metallized pattern
摘要 High density circuitry and metallic patterns are grown from polymer that has been patterned using a contact molding process. The patterned polymer is either intrinsically seedable or treated to make it seedable, e.g., it may be seeded with metallic seed ions, such as Pd ions. The patterned polymer is placed in an electroless deposition bath, with metal being plated onto its surface. Using these methods, metal (e.g, copper) may be deposited onto substrates of either organic or inorganic dielectric materials. The dielectric materials may comprise epoxy resins, ceramics, semiconductors (Si), glass, and silicon oxide.
申请公布号 US6900126(B2) 申请公布日期 2005.05.31
申请号 US20020301318 申请日期 2002.11.20
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CARTER KENNETH RAYMOND;HART MARK WHITNEY;HAWKER CRAIG JON;SCOTT JOHN CAMPBELL
分类号 G03F7/00;H01L21/768;(IPC1-7):H01L21/44;H01L21/320;H01L21/476 主分类号 G03F7/00
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