发明名称 Method of cleaning processing chamber of semiconductor processing apparatus
摘要 A method of cleaning the interior of a processing chamber first performs a halogenation treatment by supplying a treatment gas containing a halogenating gas into the processing chamber and heating a support member for a target substrate, thereby halogenating a metal element in a by-product film. A reduction treatment is then performed by supplying a treatment gas containing a reducing gas into the processing chamber, thereby reducing a halide of the metal element and liberating the metal element. An oxidation treatment is then performed by supplying a treatment gas containing an oxidizing gas into the processing chamber and heating the casing walls of the processing chamber, thereby passivating the liberated metal element by oxidation.
申请公布号 US6899767(B2) 申请公布日期 2005.05.31
申请号 US20030441003 申请日期 2003.05.20
申请人 TOKYO ELECTRON LIMITED 发明人 SAKUMA TAKESHI
分类号 C23C16/44;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):B08B3/00 主分类号 C23C16/44
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