METHOD FOR FORMING METAL WIRING LAYER OF MOSFET USING ELECTROLESS PLATING,申请号KR19970077338-传众专利搜索

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发明名称	METHOD FOR FORMING METAL WIRING LAYER OF MOSFET USING ELECTROLESS PLATING
摘要
申请公布号	KR100494148(B1)	申请公布日期	2005.05.30
申请号	KR19970077338	申请日期	1997.12.29
申请人	MAGNACHIP SEMICONDUCTOR, LTD.	发明人	KANG, YEONG SEOK
分类号	H01L29/40	主分类号	H01L29/40
代理机构		代理人
主权项
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