发明名称 |
SELF-PATTERNING OF PHOTO-ACTIVE DIELECTRIC MATERIALS FOR INTERCONNECT ISOLATION |
摘要 |
In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist. |
申请公布号 |
SG111241(A1) |
申请公布日期 |
2005.05.30 |
申请号 |
SG20040006157 |
申请日期 |
2004.10.14 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LO WU PING;ZHENG BEI CHAO;HSIA LIANG CHOO |
分类号 |
H01L21/4763;H01L21/48;H01L21/768;H01L23/48;H01L23/532;H01L29/40 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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