发明名称 NOVEL POLY(ARYLENE ETHER) DIELECTRICS
摘要 <p>The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar<SUB>1 </SUB>and divalent Ar<SUB>2 </SUB>are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:</p>
申请公布号 SG111162(A1) 申请公布日期 2005.05.30
申请号 SG20030006043 申请日期 2003.09.30
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 CHRISTOPHER LIM;SIU CHOON NG;HARDY CHAN;SIMON CHOOI;MEI SHENG ZHOU
分类号 C08G65/40;H01L21/312;H01L21/768;(IPC1-7):C08G 主分类号 C08G65/40
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