ULTRA-SHALLOW JUNCTION MOSFET HAVING A HIGH-K GATE DIELECTRIC AND IN-SITU DOPED SELECTIVE EPITAXY SOURCE/DRAIN EXTENSIONS AND A METHOD OF MAKING SAME,申请号SG20040006154-传众专利搜索

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发明名称	ULTRA-SHALLOW JUNCTION MOSFET HAVING A HIGH-K GATE DIELECTRIC AND IN-SITU DOPED SELECTIVE EPITAXY SOURCE/DRAIN EXTENSIONS AND A METHOD OF MAKING SAME
摘要
申请公布号	SG111238(A1)	申请公布日期	2005.05.30
申请号	SG20040006154	申请日期	2004.10.26
申请人	TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.	发明人	CHIH-HAO WANG;SHANG-CHIH CHEN;YEN-PING WANG;HSIEN-KUANG CHIU;LIANG-GI YAO;CHENMING HU
分类号	H01L21/28;H01L21/336;H01L29/10;H01L29/51;H01L29/78	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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