发明名称 |
METHOD OF FABRICATING CIRCULAR OR ANGULAR SPIRAL MIM CAPACITORS |
摘要 |
A method of forming a capacitor comprising the following steps. A substrate having a lower low-k dielectric layer formed thereover is provided with the lower low-k dielectric layer having a dielectric constant of less than about 3.0. Metal vertical electrode plates are formed within the lower low-k dielectric layer so that the adjacent metal vertical electrode plates have lower low-k dielectric layer portions therebetween. The lower low-k dielectric layer portions between the adjacent metal vertical electrode plates are replaced with high-k dielectric material trench portions having a dielectric constant of greater than about 3.0. |
申请公布号 |
SG111242(A1) |
申请公布日期 |
2005.05.30 |
申请号 |
SG20040006158 |
申请日期 |
2004.10.18 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
SHAO KAI;NG CHIT HWEI;PURAKH RAJ VERMA;ZHENG JIA ZHEN;SANFORD CHU |
分类号 |
H01L27/08 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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