发明名称 PLASMA PROCESSING SYSTEM
摘要 A plasma processing system comprising a chamber for containing a substrate being processed, a unit for supplying processing gas into the chamber, and a unit for introducing a microwave for generating plasma into the chamber. The microwave introducing unit comprises an oscillator delivering a plurality of microwaves having specified outputs, and an antenna section having a plurality of antennas transmitting the plurality of microwaves delivered from the microwave oscillator.
申请公布号 KR20050050116(A) 申请公布日期 2005.05.27
申请号 KR20057005900 申请日期 2005.04.06
申请人 TOKYO ELECTRON LIMITED 发明人 KASAI SHIGERU;OSADA YUKI;OGINO TAKASHI
分类号 H05H1/46;B01J19/08;C23C16/511;H01J37/32;H01L21/3065;H01L21/31;(IPC1-7):H01L21/306;H01L21/205;H01L21/02 主分类号 H05H1/46
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