| 摘要 |
The present invention relates to a manufacturing method of a thin-film structural body which is formed by using a semiconductor processing technique, and an object thereof is to provide a manufacturing method of a thin-film structural body, capable of reducing a stress difference exerted between a sacrifice film and a substrate upon thermal shrinkage.In order to achieve this object, a sacrifice film (51), which is formed on a substrate (1), is formed by using a PSG film in which the concentration of phosphorus is set to a value which is greater than 3 mol %, and also smaller than 4 mol %. After a thin-film layer (53) has been formed thereon and after the thin-film layer (53) has been patterned, the sacrifice film (51) is removed by an etching process. |
