ZnO-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a ZnO-based semiconductor light emitting device and its manufacturing method by which the quality of a light emitting part can be improved by enhancing crystallinity of a buffer layer simply and conveniently.

SOLUTION: At least a buffer layer 2 made of a ZnO-based compound not included in a substrate 1 and a light emitting layer 10 made of a ZnO-based compound thereon are formed on the main surface of the substrate 1. In such a lamination structure, the buffer layer 2 is formed by metal organic vapor-phase epitaxy using an oxygen as gaseous species of oxygen source.

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