METHOD FOR MAKING MASK PATTERN DATA

摘要

PROBLEM TO BE SOLVED: To provide a proximity correction mask with high accuracy and no defect in a short period of time while keeping a process margin in a complicated LSI pattern.

SOLUTION: A pattern with high accuracy is formed by carrying out a step (S12) of subjecting the design data to proximity correction; a step (S13) of extracting a portion where the process margin deteriorates; and a step (S14) of correcting a pattern in the extracted portion where the process margin deteriorates. By the method for making mask pattern data, a proximity correction mask with high accuracy and no correction defect can be obtained in a short period of time while keeping the process margin in a complicated LSI pattern.

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