发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND POWER-SUPPLY-VOLTAGE/SUBSTRATE-BIAS CONTROL CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which does not require any feedback circuit nor any external specific power supply for substrate bias for compensating the dispersion of threshold voltages of switching elements. SOLUTION: The semiconductor integrated circuit 100 comprises a semiconductor substrate 5, a plurality of well regions 10, 20 formed in the surface of the substrate and mutually electrically isolated, a plurality of MOS transistors MN, MP formed in the plurality of the well regions, and substrate-bias generation circuits BN, BP that respectively supply substrate biases to the plurality of the well regions in accordance with manufacturing dispersion of measured threshold voltages of the plurality of the MOS transistors to make each threshold voltage of the plurality of the MOS transistors adaptable to a prescribed threshold voltage. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005136322(A) 申请公布日期 2005.05.26
申请号 JP20030372615 申请日期 2003.10.31
申请人 TOSHIBA CORP 发明人 FUJITA TETSUYA;HARA HIROYUKI;HAMADA MOTOTSUGU
分类号 H01L27/04;G05F3/20;H01L21/822;H01L21/8238;H01L27/092;H03K3/01;H03K17/00;(IPC1-7):H01L21/822;H01L21/823 主分类号 H01L27/04
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