| 摘要 |
PROBLEM TO BE SOLVED: To improve transfer efficiency of signal charge in an amplification type solid state imaging device. SOLUTION: The amplification type solid state imaging device has a photoelectric conversion part; an impurity diffusion region for charge storage for storing electric charges transferred from the photoelectric conversion part; an amplifier which has a charge detection part for storing electric charges transferred from a charge storage and outputs a picture element signal according to a stored charge amount of the charge detection part; a first transfer electrode for transferring the electric charges from the photoelectric conversion part to the charge storage part; and a second transfer electrode for transferring the electric charges from the charge storage part to the charge detection part. In the manufacturing method, after the formation of the second transfer electrode, the impurity diffusion region for charge storage is formed by self alignment by ion implantation using the second transfer electrode as a mask. Consequently, any position displacement between the impurity diffusion region for charge storage and the second transfer electrode is prevented from happening. That is, when a signal charge is transferred from the impurity diffusion region for electric charge storage to the charge detection part, a potential barrier is not generated between both thereof and complete transfer is realized. COPYRIGHT: (C)2005,JPO&NCIPI
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