| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, in which a high breakdown voltage transistor and a low voltage driving transistor are formed on the same substrate and which is capable of contriving the improvement in microfabrication and reliability, by employing LOCOS method and STI method in parallel. SOLUTION: The manufacturing method of a semiconductor device comprises a process for forming trenches 21 on a semiconductor layer 10; a process for forming an insulating layer 22a so as to bury the trenches 21 and cover the upper part of whole surface of the semiconductor layer 10; a process for removing a part of exposed insulating layer 22a under the condition where the insulating layers 22a above regions, on which offset insulating layers 20b and the trenches 21 are formed, are covered by a mask R6; a process for applying CMP so as to remove at least the insulating layer 22a of the low-voltage transistor forming region 10LV; and a process for removing the insulating layer 22a of the region, on which the offset insulating layer 20b is formed. COPYRIGHT: (C)2005,JPO&NCIPI
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