METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein the interface state of wafer surface can be sufficiently recovered and be made small. SOLUTION: The method for manufacturing a semiconductor device includes a first step to make a hole 3 corresponding to the center of a respective chip formation part 2 on the rear side of a wafer 1, and a second step to apply hydrogen annealing. The bottom of the hole 3 is made close to the surface side of the wafer 1 forming a semiconductor device formation area, so that hydrogen enters the chip formation part 2 of the wafer 1 from its rear side. As a result, the interface state occuring in the semiconductor device formation area can be recovered and be made less. COPYRIGHT: (C)2005,JPO&NCIPI