| 摘要 |
PROBLEM TO BE SOLVED: To assure a high breakdown voltage and shorten the length of an element peripheral part which will become a voltage-proof portion, in a semiconductor device having a parallel pn structure. SOLUTION: The semiconductor device has the parallel pn structure 20 consisting of alternately bonded n-type drift regions 1 and p-type partition regions 2 in an element active section. In the element peripheral part which will become the voltage-proof portion, an insulation region 14 surrounding the parallel pn structure 20 is formed. The insulation region 14 is formed of an insulator having a critical field higher than that of a semiconductor, and is extended from the front face side where an element surface structure such as an MOSFET is formed to an n<SP>+</SP>drain layer 11 on the element backside. In the parallel pn structure 20, a width W2 of the p-type partition region 2a which is adjacent to the insulation region 14 is made smaller than a width W1 of the p-type partition region 2 which is not adjacent to the insulation region 14, assuring a charge-balanced state in the end of a drift consisting of the parallel pn structure section 20. COPYRIGHT: (C)2005,JPO&NCIPI
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