INSULATED GATE-TYPE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To form a very thin collector layer with a comparatively simple method in an insulated gate-type bipolar transistor and the manufacturing method of the transistor. SOLUTION: A Ti barrier metal base film 110 and a TiN barrier metal film 111 are formed on surfaces of a p+-type base region 104 and an n+type emitter region 105. An emitter electrode film 112 is formed on them by Al-Si. A p--type collector layer 109 is laminated and formed on the surface of an n+-type buffer layer 103. The p--type collector layer 109 is very thinly formed on a surface layer of the n+-type buffer layer 103 by heating an Al film becoming a collector electrode film 113 at a temperature in a range of 600°C to 700°C. Diffusion of Al from the emitter electrode film 112 is inhibited by the Ti barrier metal base film 110 and the TiN barrier metal film 111. COPYRIGHT: (C)2005,JPO&NCIPI