| 摘要 |
A solid state imaging device includes a plurality of pixels arranged in a matrix form that generates photo-generated electric charges corresponding to incidence light. The device comprises an effective pixel region used for imaging and a non-effective pixel region provided separately from the effective pixel region. Each pixel has an accumulation well which accumulates photo-generated electric charges, a modulation transistor, and a transfer control element which transfers the photo-generated electric charges accumulated in the accumulation well to the modulation transistor. When transferring the photo-generated electric charges accumulated in the accumulation well to the modulation transistor by the transfer control element, the photo-generated electric charges in the effective pixel region and the photo-generated electric charges which do not include the photo-generated electric charges in the effective pixel region are transferred separately at least two times.
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