| 摘要 |
PROBLEM TO BE SOLVED: To shorten a manufacturing process of a semiconductor device by making a process unnecessary which is necessary in the conventional process that photoresist used as a mask is eliminated. SOLUTION: A method for manufacturing a semiconductor device includes a first process for forming a first gate insulated film for a first transistor on a silicon substrate, a second process for forming a lower layer conductive film on the first gate insulated film, a third process for deleting a part corresponding to a second region out of the lower layer conductive film, a fourth process for deleting a part corresponding to the second region out of the first gate insulating film by using a part corresponding to a first region out of the lower layer conductive film as a mask, a fifth process for forming a second gate insulated film for a second transistor in the second region, and a sixth process for forming an upper layer conductive film on the first gate insulated film in the first region and on the second gate insulated film in the second region. COPYRIGHT: (C)2005,JPO&NCIPI
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