TANTALUM COMPOUND, METHOD FOR PRODUCING THE SAME AND METHOD FOR FORMING TANTALUM-CONTAINING THIN FILM

摘要

PROBLEM TO BE SOLVED: To obtain a tantalum compound that has reactivity to water lower than that of a conventional tantalum compound and forms a tantalum-containing thin film by a CVD method and to provide a method for producing the same and a method for forming a tantalum-containing thin film using the compound. SOLUTION: The tantalum compound represented by formula 1 (R1is a 1-3C alkyl; R2is a 1-5C alkyl or a 3-4C trialkylsilyl; R3is a 1-6C alkyl or a 3-4C trialkylsilylmethyl; R4is methyl or ethyl; m is an integer of 0-5; n is an integer of 0-3; m+n is a number of≤5; X and z are each chlorine, bromine or iodine; with the proviso that a case where R1and R2are each methyl and m+n=4 or 5 is omitted) is obtained by reacting a tantalum compound represented by formula 2 with an alkylmagnesium halide represented by general formula 3 R3MgX or an alkyllithium compound represented by formula 4 R3Li in an organic solvent. The tantalum-containing thin film is obtained by using the compound as a raw material. COPYRIGHT: (C)2005,JPO&NCIPI