| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMP (chemical mechanical polishing system) which is constituted so that a polishing pad of center section of a platen (106) can be easily removed, and the pad so as to prevent it from being uplifted on its edge during polishing, in the CMP of semiconductor wafer. <P>SOLUTION: Front surface of a platen, which supports the polishing pad, has an almost circular center section (300) surrounded by an annular section (302). The center section (300) is grooved so that attaching the surface area between inner section of the polishing pad and the platen (106) is decreased. A second fluoropolymer having a low surface wetting coefficient is arranged at the center section (300). A second fluoropolymer, having a high surface wetting coefficient, is arranged at the annular section (302). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
