发明名称 POLISHING PAD
摘要 <P>PROBLEM TO BE SOLVED: To provide a polishing pad having a combination of improved information to produce a flattened wafer with a low defect factor, considering that the performance for defect factor becomes a sacrifice when using a polishing pad producing a good flatness, or, the performance for flattening becomes a sacrifice when using a polishing pad producing a low defect factor. <P>SOLUTION: The polishing pad is useful in flattening a semiconductor base material. The polishing pad contains a polymer material which has a porosity of at least 0.1 vol.%, a KEL(kinetic energy loss) energy loss factor of 385 to 750 l/Pa at 40&deg;C and 1 rad/sec, and an elastic modulus E' of 100 to 400 MPa at 40&deg;C and 1 rad/sec. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005136400(A) 申请公布日期 2005.05.26
申请号 JP20040295816 申请日期 2004.10.08
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC 发明人 JAMES DAVID B;KULP MARY JO
分类号 B24B37/00;B24B37/04;B24D3/26;B24D3/28;B24D13/14;C08G18/10;C08G18/48;C08J5/14;H01L21/304 主分类号 B24B37/00
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