| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof in which a pattern ratio is not increased and a wiring dummy pattern can improve a global step of CMP at the time of inserting dummy patterns which are different from actual wiring patterns. SOLUTION: The semiconductor device is formed in the structure that a gate wiring pattern 12 (wiring pattern) is formed on a semiconductor substrate 10, a plurality of dummy patterns 14 are also formed at the circumference thereof, and a BPSG oxide film 16 (insulating film) which is formed flat by the CMP is formed as an interlayer insulating film on the gate wiring pattern 12 and dummy patterns 14. In this semiconductor device, the dummy patterns 14 are formed by providing a pattern forming region such as a slit 14b. COPYRIGHT: (C)2005,JPO&NCIPI |
