发明名称 POWER SEMICONDUCTOR MODULE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor module that has high heat radiation characteristics, can be reduced in size, and is provided with a heat sink. SOLUTION: The power semiconductor module provided with the heat sink comprises an insulating substrate, having front and rear surfaces, a metallic pattern provided on the front surface of the substrate, and a semiconductor element provided on the metallic pattern. The module also comprises projecting sections provided on the rear surface of the substrate, and a supplying means which makes a cooling liquid flow in its supply direction along the rear surface of the substrate. The projecting sections are disposed to generate a turbulent flow in the flow of a refrigerant. The supplying means makes the refrigerant flow in its supplying direction along the rear surface of the substrate, by supplying the refrigerant in a direction which is almost perpendicular to the rear surface of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005136278(A) 申请公布日期 2005.05.26
申请号 JP20030371880 申请日期 2003.10.31
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIKUCHI MASAO;CHIBA HIROSHI
分类号 H01L23/473;(IPC1-7):H01L23/473 主分类号 H01L23/473
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