发明名称 PLASMA PROCESSING APPARATUS AND ITS CLEANING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To secure absorption strength by an electrostatic chuck, and to clean the inside of a chamber. <P>SOLUTION: A method for cleaning the inside of the chamber 4 comprises a step of mounting a dummy wafer D on the electrostatic chuck 7, controlling the balance of current flowing in electromagnetic coils 3a, 3b, and making a plasma PZ generated in the chamber 4 move in the vertical directions. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005136183(A) 申请公布日期 2005.05.26
申请号 JP20030370627 申请日期 2003.10.30
申请人 SEIKO EPSON CORP 发明人 SUGAWARA TAKUMI
分类号 H05H1/46;C23C16/52;H01L21/304;H01L21/3065 主分类号 H05H1/46
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