CMOS ON HYBRID SUBSTRATE WITH DIFFERENT CRYSTAL ORIENTATIONS FORMED BY EMPLOYING SILICON-TO-SILICON DIRECT WAFER BONDING

摘要

PROBLEM TO BE SOLVED: To provide a hybrid substrate, equipped with semiconductor layers, having different crystal orientations isolated by a conductive or an insulating interface. SOLUTION: A method of providing a hybrid substrate, equipped with semiconductor layers having different crystal orientations that are isolated by a conductive or an insulating interface formed by employing semiconductor-to-semiconductor direct wafer bonding, is disclosed. The hybrid substrate may also be yielded by a method, employing a direct bonding method which provides an integrated semiconductor structure, in which various CMOSs are constructed on plane directions which enhance the performance of a device. COPYRIGHT: (C)2005,JPO&NCIPI