发明名称 |
Method of forming gate oxide layers with multiple thicknesses on substrate |
摘要 |
A method of forming gate dielectric layers with various thicknesses on a substrate. At least a first active region and a second active region are provided on the substrate. A first thermal oxide layer is formed on the substrate. A blanket dielectric layer with a first thickness is deposited overlying the substrate. The dielectric layer and the underlying first thermal oxide layer on the second active region are removed to expose the substrate. A second thermal oxide layer with a second thickness less than the first thickness is formed on the second active region. A first gate is formed on the dielectric layer on the first active region and a second gate is formed on the second thermal oxide layer on the second active region.
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申请公布号 |
US2005112824(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20030723794 |
申请日期 |
2003.11.26 |
申请人 |
JONG YU-CHANG;LIU RUEY-HSIN;LIN YI-CHUN;HSU SHUN-LIANG;WU CHEN-BAU;WU KUO-MING |
发明人 |
JONG YU-CHANG;LIU RUEY-HSIN;LIN YI-CHUN;HSU SHUN-LIANG;WU CHEN-BAU;WU KUO-MING |
分类号 |
H01L21/8234;(IPC1-7):H01L21/823;H01L21/336 |
主分类号 |
H01L21/8234 |
代理机构 |
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主权项 |
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