| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element, in which the deterioration of the luminance of a light-emitting diode using AlGaInP in its light-emitting layer in the initial stage is improved. <P>SOLUTION: On an active layer 104 composed of Al<SB>0.1</SB>Ga<SB>0.4</SB>In<SB>0.5</SB>P, part 115 of a clad layer composed of undoped Al<SB>0.35</SB>Ga<SB>0.15</SB>In<SB>0.5</SB>P and a clad layer 105 composed of Zn-doped Al<SB>0.35</SB>Ga<SB>0.15</SB>In<SB>0.5</SB>P are grown. Successively, part 116 of a current diffusing layer composed of undoped Al<SB>0.7</SB>Ga<SB>0.3</SB>As and a current diffusion layer 106 composed of Zn-doped Al<SB>0.7</SB>Ga<SB>0.3</SB>As are grown. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
