| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition, in which there are the problems that, when a semiconductor device having a copper film and a tantalum compound is polished, a polish selection ratio of the copper and the tantalum compound is not sufficient, and, when a selection ratio to the copper is raised, a copper film of a wiring groove or hole is deleted excessively, the smoothness of the front surface of the copper film is spoiled, etc., and these problems are improved. <P>SOLUTION: The polishing composition is obtained by mixing colloidal silica having a mean particle size of 30 nm, a copolycondensate of PMMA having a mean particle size of 40 nm and divinylbenzene, a tartaric acid, a benzotriazol and a hydrogen peroxide with an ion exchange water filtered with a 0.5μm cartridge filter to become a specific concentration, by agitating the mixture by a high speed homogenizer, and by dispersing it uniformly. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
