| 摘要 |
Disclosed is a method for isolating semiconductor devices. The method includes the steps of: forming a semi-finished substrate provided with a trench and a patterned pad nitride layer on a substrate; forming a first oxide layer on at least one portion of the trench; forming a second oxide layer on the first oxide layer and the patterned pad nitride layer; forming a nitride layer on the second oxide layer; forming an isolation oxide layer on the second oxide layer; and etching the isolation oxide layer, wherein the second oxide layer serves as an etch stop for the nitride layer.
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