发明名称 |
Methods for forming wiring and manufacturing thin film transistor and droplet discharging method |
摘要 |
It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.
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申请公布号 |
US2005112906(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20040970299 |
申请日期 |
2004.10.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MAEKAWA SHINJI;MURANAKA KOJI |
分类号 |
H01L21/20;H01L21/26;H01L21/324;H01L21/336;H01L21/42;H01L21/477;H01L21/77;H01L21/84;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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