发明名称 [METHODS AND SYSTEMS FOR RESISTIVITY ANISOTROPY FORMATION ANALYSIS]
摘要 Techniques for determining a formation property by simplifying various two-geological-layer or multi-geological-layer models into a multi-electrical-layer model. A volume fraction of a layer in a multi-electrical-layer model is determined for an anisotropic region (sliding window) of the formation. The multi-electrical-layer electrical model includes a relative-lower-resistivity layer and a relative-higher-resistivity layer. A high-resolution resistivity measurement is used in the determination and resistivities for the relative-lower-resistivity layer and for the relative-higher-resistivity layer based on the volume fraction and bulk resistivity measurements of the anisotropic region are determined. The formation property is based on the volume fraction, the resistivity of the relative-lower-resistivity layer, the resistivity of the relative-higher-resistivity layer, a total porosity of the anisotropic region, and bulk resistivity measurements of the region.
申请公布号 US2005114030(A1) 申请公布日期 2005.05.26
申请号 US20030604492 申请日期 2003.07.25
申请人 SCHLUMBERGER TECHNOLOGY CORPORATION 发明人 LIU CHENG B.;LI QIMING;SHRAY FRANK P.;TABANOU JACQUES R.
分类号 G01V3/20;(IPC1-7):G06F19/00 主分类号 G01V3/20
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