发明名称 PLASMA PROCESSING APPARATUS AND VACUUM VESSEL USED THEREIN
摘要 <P>PROBLEM TO BE SOLVED: To realize a vacuum vessel of long service life which has a form, wherein concentrated generation of thermal stresses do not occur, reduces the temperature difference inside the vacuum vessel, and eliminates generation of cracks due to the generation of partial high-temperature parts or low-temperature parts. <P>SOLUTION: The plasma processing apparatus is equipped with a vacuum chamber 25 which forms a plasma treatment region 19 to interior; means 26a, 26b for supplying and discharging gas to and from the vacuum chamber 25; and electrode means 27, 29 which are arranged outside the vacuum chamber 25, apply high frequency power to gas in the vacuum chamber 25, and form plasma. In the plasma processor, which performs CVD treatment to a substrate W to be treated in the vacuum chamber 25, the chamber 25 is provided with a practically flat ceiling part 20 and a tapered part 21 continuous to the ceiling 20 in the outer peripheral surface. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005136073(A) 申请公布日期 2005.05.26
申请号 JP20030369107 申请日期 2003.10.29
申请人 KYOCERA CORP 发明人 UEKI SHUZO
分类号 H05H1/46;C23C16/507;H01L21/205 主分类号 H05H1/46
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