| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which has a channel stopper of relatively large width and good breakdown voltage characteristic or particularly the good breakdown voltage characteristic of an end, and to provide a method for manufacturing the same. SOLUTION: In the semiconductor device, the channel stopper 18 is provided relatively widely adjacent to the outer peripheral p-type region 17 formed unavoidably in a manufacturing process at the outer peripheral edge of a semiconductor substrate 19. The polysilicon film on an n-type region comprising the channel stopper 18 for constituting the channel stopper 18 is first removed at an outer peripheral end in a width to be formed with the outer peripheral p-type region 17 of the minimum limit, and the outer peripheral p-type region 17 of the minimum width and the channel stopper 18 of the maximum width are formed by performing a p-type impurity diffusion in this state. Thereafter, when a second recess 26 is formed, the outer peripheral end of the polysilicon film is further removed, and an EQR 27 of a predetermined width is thereby formed. COPYRIGHT: (C)2005,JPO&NCIPI |
