| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a method therefor which enable uniformity in the distribution of electric power in a reaction vessel to be increased to realize the more uniform quality of a deposited film, and consequently realize the formation of the deposited film of excellent quality with high productivity. SOLUTION: In the plasma processing apparatus in which a cylindrical substrate installed in a reaction vessel is subjected to plasma processing, a high frequency electrode and a plurality of auxiliary members different from the cylindrical substrate are installed around the cylindrical substrate within the reaction vessel, and at least a part of the auxiliary members is formed of a conductive material, and is also electrically grounded. COPYRIGHT: (C)2005,JPO&NCIPI
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