| 摘要 |
PROBLEM TO BE SOLVED: To provide an organometal chemical vapor deposition apparatus for forming a film having a desired composition. SOLUTION: In the organometal chemical vapor deposition apparatus 3 for depositing a film on a substrate 2 by evaporating raw materials 1a and 1b of an organometallic complex, all or one part of the portion contacting with the raw materials 1a and 1b of the organometallic complex or the vaporized raw materials of the organometallic complex are formed of a insulating material 4. COPYRIGHT: (C)2005,JPO&NCIPI
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