发明名称 SINGLE CRYSTAL PRODUCTION APPARATUS
摘要 PROBLEM TO BE SOLVED: To solve the problem that the temperature gradient at a cone part becomes considerably small in comparison with that at the face of a heater when the cone part of the bottom part of a crucible is arranged at a position corresponding to melting point of the surface of the heater, and when the temperature gradient becomes small, the position of the solid-liquid interface becomes unstable by heat disturbance and the crystal defects are liable to occur for a single crystal production apparatus. SOLUTION: In the single crystal production apparatus, the temperature distribution of the surface of the heater is transferred to the bottom part of the crucible, a temperature gradient is formed along the bottom face of the crucible, and it becomes possible to gradually move the melting position to the peripheral direction from a seed crystal, and further, in the bottom part of the crucible, it becomes possible to fixedly maintain the temperature gradient in the vicinity of the solid-liquid interface and crystal growth speed similarly to the constant diameter part by providing a plurality of fins protruding in the obliquely downward direction in the symmetricity to the axis at the bottom part of the crucible. Resultingly, it becomes possible to produce a large diameter, high quality single crystal. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005132675(A) 申请公布日期 2005.05.26
申请号 JP20030370641 申请日期 2003.10.30
申请人 CANON INC 发明人 YABU SHUICHI
分类号 C30B11/00;C30B29/12;(IPC1-7):C30B11/00 主分类号 C30B11/00
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