| 摘要 |
Disclosed is a chemical mechanical polishing apparatus for polishing a surface of a wafer using a mechanical friction as well as a chemical polishing agent. The chemical mechanical polishing apparatus includes a polishing head for absorbing a wafer and a polishing means for polishing the wafer. The polishing apparatus may include a platen composed of at least three segments formed in conformity with polishing zones, a polishing pad provided on each of the segments, and a support for supporting the segments such that the segments are separately adjustable in the height depending on the polishing zones and are rotatable.
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