发明名称 |
Medical device and method of manufacturing |
摘要 |
Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.
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申请公布号 |
US2005113895(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20030723016 |
申请日期 |
2003.11.26 |
申请人 |
DANZL RALPH B.;BOONE MARK R.;GERRISH PAUL F.;MATTES MICHAEL F.;MUELLER TYLER;VAN WAGONER JEFF |
发明人 |
DANZL RALPH B.;BOONE MARK R.;GERRISH PAUL F.;MATTES MICHAEL F.;MUELLER TYLER;VAN WAGONER JEFF |
分类号 |
A61N1/39;H01L21/336;H01L23/48;H01L29/417;H01L29/78;(IPC1-7):A61N1/375 |
主分类号 |
A61N1/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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