| 摘要 |
A system and method of inspecting semiconductor wafers that is capable of determining a scattering power associated with a wafer surface defect whether or not the scattering power associated with the defect exceeds the dynamic range of the system. The scatting power of the detected defect is obtained by determining the height of a Gaussian shape representing data collected by the system. The height of the Gaussian shape is determined by defining a plurality of cross-sectional areas of the Gaussian shape, determining a respective value of each cross-sectional area, determining a respective value of the natural logarithm of intermediate heights of the Gaussian shape corresponding to the cross-sectional areas, plotting the cross-sectional area values as a function of the natural logarithm of the intermediate height values to form a substantially linear plot, determining a natural logarithm of the height value corresponding to a zero area value based on the substantially linear plot, and determining the inverse natural logarithm of the value to obtain the height of the Gaussian shape.
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