发明名称 METHOD FOR MANUFACTURING OXIDE WAFER WITH HIGH FLATNESS
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly flat oxide wafer without local dents. <P>SOLUTION: In the method for manufacturing a highly flat oxide wafer, an oxide wafer pasted to a pasting plate is laid on an abrasive cloth pasted on a surface plate in a state that water is interposed between the oxide wafer 2 and the pasting plate 1. The surface plate is rotated while bringing the grinding face of the oxide wafer into contact with the abrasive cloth with prescribed pressure and feeding a grinding liquid. Consequently, the grinding face of the oxide wafer is worked into a state of a mirror surface. The water interposed between the oxide wafer and the pasting plate is constantly held in a state of not including air bubbles while the grinding face of the oxide wafer is worked into a state of the mirror surface. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005131744(A) 申请公布日期 2005.05.26
申请号 JP20030371054 申请日期 2003.10.30
申请人 SUMITOMO METAL MINING CO LTD 发明人 NISHIMURA YUSUKE
分类号 B24B37/04;B24B37/30 主分类号 B24B37/04
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