| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser processing device which can realize effective amplification of the laser beam and can be devised have a long lifetime, and to miniaturize the device. SOLUTION: Since a laser medium is composed of a Yb:YAG crystal 25 having light conversion efficiency higher than an Nd:YAG crystal and has a rod-shaped profile, laser beams of identical light intensity can be output at a lower doped concentration than Nd:YAG laser, to suppress a heating value by a portion treated at the low doped concentration, and to cool by a relatively small-sized heat sink 26. Further, since a semiconductor laser 21 with InGaAs as an active layer is employed, laser beams in matching with the absorption wavelength of the Yb:YAG crystal 25 are emitted therefrom, make it excited effectively, and also unlike the conventional structures which use the semiconductor laser 21 with AlGaAs as the active layer, there is no possibility of oxidization of Al, and a long lifetime can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI
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