发明名称 |
Insulated gate bipolar transistor and method of fabricating the same |
摘要 |
An insulated gate bipolar transistor has a P-type collector region containing a P-type impurity such as boron. A relatively thin N-type buffer region containing arsenic in a relatively high concentration is formed on the collector region via an anti-diffusion region. The anti-diffusion region is provided in such a way that its thickness is the same as or slightly smaller than the distance over which the P-type impurity is diffused from the collector region toward the buffer region in a device fabrication process.
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申请公布号 |
US2005110076(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20040994064 |
申请日期 |
2004.11.19 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
TORII KATSUYUKI;TAKAHASHI RYOJI |
分类号 |
H01L29/78;H01L21/331;H01L21/336;H01L29/08;H01L29/739;H01L31/109;(IPC1-7):H01L31/109 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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