| 发明名称 |
Insulated gate bipolar transistor and method of fabricating the same |
| 摘要 |
An IGBT has an N-type buffer region between a P-type collector region and a P-type base region. The buffer region includes arsenic as a N-type impurity. The buffer region is formed to have a relatively high impurity concentration of equal to or greater than 5x1017 cm-3 and a relatively small thickness of 2 to 10 mum.
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| 申请公布号 |
US2005110075(A1) |
申请公布日期 |
2005.05.26 |
| 申请号 |
US20040993604 |
申请日期 |
2004.11.19 |
| 申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
TORII KATSUYUKI;TAKAHASHI RYOJI |
| 分类号 |
H01L29/78;H01L21/328;H01L21/331;H01L21/336;H01L29/72;H01L29/739;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/78 |
| 代理机构 |
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