发明名称 |
Precise patterning of high-K films |
摘要 |
A high-K thin film patterning solution is disclosed to address structural and process limitations of conventional patterning techniques. Subsequent to formation of gate structures adjacent a high-K dielectric layer, a portion of the high-K dielectric layer material is reduced, preferably via exposure to hydrogen gas, to form a reduced portion of the high-K dielectric layer. The reduced portion may be selectively removed utilizing wet etch chemistries to leave behind a trench of desirable geometric properties.
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申请公布号 |
US2005110072(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20040018015 |
申请日期 |
2004.12.20 |
申请人 |
BRASK JUSTIN K.;DOCZY MARK L.;METZ MATTHEW V.;BARNAK JOHN;MARKWORTH PAUL R. |
发明人 |
BRASK JUSTIN K.;DOCZY MARK L.;METZ MATTHEW V.;BARNAK JOHN;MARKWORTH PAUL R. |
分类号 |
H01L21/28;H01L21/311;(IPC1-7):H01L21/823;H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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