| 摘要 |
A method for performing a parallel bit test of a semiconductor memory device, including writing data to each of a plurality of memory cells, reading data from each of the plurality of memory cells, testing the data from each of the plurality of memory cells in a first test mode, and testing the data from each of the plurality of memory cells in a second test mode. A circuit including a first test mode circuit for receiving first data, a second test mode circuit for receiving second data, and wherein the first test mode circuit tests the received first data and the second test mode tests the received second data. Another circuit including a first comparator with a plurality of comparison circuits, a test mode selector for selecting at least one of a plurality of outputs from the first comparator, and a second comparator for receiving the selected output.
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